General Semiconductor 2N2018

Manufacturer No:

2N2018

Manufacturer:

General Semiconductor

Package:

TO-111-4, Stud

Description:

- - 100?A (ICBO) TO-111-4, Stud Stud Mount

Quantity:

Delivery:

Payment:

In Stock :Available

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2N2018 information

General Semiconductor 2N2018 technical specifications, attributes, parameters and parts with similar specifications to General Semiconductor 2N2018.

Type
Parameter

Mounting Type
Stud Mount

Package / Case
TO-111-4, Stud

Supplier Device Package
TO-111

Mfr
General Semiconductor

Package
Bulk

Product Status
Active

Power - Max
20 W

DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA, 10V

Current - Collector Cutoff (Max)
100?A (ICBO)

Vce Saturation (Max) @ Ib, Ic
6V @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max)
125 V

Current - Collector (Ic) (Max)
1 A

Frequency - Transition
2MHz

Download datasheets and manufacturer documentation for General Semiconductor 2N2018.

2N2018 Overview

In this device, the DC current gain is 20 @ 500mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 6V @ 100mA, 1A.Product comes in the supplier's device package TO-111.There is a 125 V maximal voltage in the device due to collector-emitter breakdown.

2N2018 Features

the DC current gain for this device is 20 @ 500mA, 10V
the vce saturation(Max) is 6V @ 100mA, 1A
the supplier device package of TO-111

2N2018 Applications

There are a lot of General Semiconductor
2N2018 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

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