Renesas 2SA812B-T1B-AT

Manufacturer No:

2SA812B-T1B-AT

Manufacturer:

Renesas

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP 150°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount

Quantity:

Delivery:

Payment:

In Stock :Available

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2SA812B-T1B-AT information

Renesas 2SA812B-T1B-AT technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SA812B-T1B-AT.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Supplier Device Package
3-MINIMOLD

Mfr
Renesas

Package
Bulk

Product Status
Obsolete

Operating Temperature
150°C (TJ)

Power - Max
200 mW

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 1mA, 6V

Current - Collector Cutoff (Max)
100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max)
50 V

Current - Collector (Ic) (Max)
100 mA

Frequency - Transition
180MHz

Download datasheets and manufacturer documentation for Renesas 2SA812B-T1B-AT.

2SA812B-T1B-AT Overview

In this device, the DC current gain is 90 @ 1mA, 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Product comes in the supplier's device package 3-MINIMOLD.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.

2SA812B-T1B-AT Features

the DC current gain for this device is 90 @ 1mA, 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of 3-MINIMOLD

2SA812B-T1B-AT Applications

There are a lot of Renesas
2SA812B-T1B-AT applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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