Renesas 2SK1339-E

Manufacturer No:

2SK1339-E

Manufacturer:

Renesas

Package:

TO-3P-3, SC-65-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 7 ? @ 1.5A, 10V ±30V 425pF @ 10V 900V TO-3P-3, SC-65-3

Quantity:

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2SK1339-E information

Renesas 2SK1339-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK1339-E.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-3P-3, SC-65-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

Published
2005

JESD-609 Code
e2

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Tin/Copper (Sn/Cu)

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Pin Count
4

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
80W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
7 ? @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds
425pF @ 10V

Current - Continuous Drain (Id) @ 25°C
3A Ta

Rise Time
40ns

Drain to Source Voltage (Vdss)
900V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Fall Time (Typ)
55 ns

Turn-Off Delay Time
50 ns

Continuous Drain Current (ID)
3A

Gate to Source Voltage (Vgs)
30V

Drain Current-Max (Abs) (ID)
3A

Drain-source On Resistance-Max
7Ohm

Pulsed Drain Current-Max (IDM)
7A

DS Breakdown Voltage-Min
900V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK1339-E.

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

2SK1339-E Overview

A device's maximum input capacitance is 425pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 7A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 900V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

2SK1339-E Features

a continuous drain current (ID) of 3A
the turn-off delay time is 50 ns
based on its rated peak drain current 7A.
a 900V drain to source voltage (Vdss)

2SK1339-E Applications

There are a lot of Renesas Electronics America
2SK1339-E applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

User Guide

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