VISHAY SI7120ADN-T1-GE3
Manufacturer No:
SI7120ADN-T1-GE3
Manufacturer:
Package:
SMALL OUTLINE, S-PDSO-C5
Description:
TRANSISTOR 6 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power
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SI7120ADN-T1-GE3 information
VISHAY SI7120ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI7120ADN-T1-GE3.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- End Of Life
- Ihs Manufacturer
- VISHAY SILICONIX
- Package Description
- SMALL OUTLINE, S-PDSO-C5
- Pin Count
- 8
- Reach Compliance Code
- unknown
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Vishay
- Avalanche Energy Rating (Eas)
- 24 mJ
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 60 V
- Drain Current-Max (ID)
- 6 A
- Drain-source On Resistance-Max
- 0.021 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- S-PDSO-C5
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 5
- Operating Mode
- ENHANCEMENT MODE
- Package Body Material
- PLASTIC/EPOXY
- Package Shape
- SQUARE
- Peak Reflow Temperature (Cel)
- 260
- Polarity/Channel Type
- N-CHANNEL
- Pulsed Drain Current-Max (IDM)
- 40 A
- Qualification Status
- Not Qualified
- Surface Mount
- YES
- Terminal Finish
- Matte Tin (Sn) - annealed
- Terminal Form
- C BEND
- Terminal Position
- DUAL
- Time@Peak Reflow Temperature-Max (s)
- 30
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
Download datasheets and manufacturer documentation for VISHAY SI7120ADN-T1-GE3.
Datasheets:
RohsStatement:
SI7120ADN-T1-GE3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 24 mJ.This device has a continuous drain current (ID) of [9.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.5V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI7120ADN-T1-GE3 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 9.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 40A.
a threshold voltage of 2.5V
SI7120ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7120ADN-T1-GE3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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