VISHAY SIHD7N60ET4-GE3
Manufacturer No:
SIHD7N60ET4-GE3
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 600m ? @ 3.5A, 10V ±30V 680pF @ 100V 40nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
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SIHD7N60ET4-GE3 information
VISHAY SIHD7N60ET4-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SIHD7N60ET4-GE3.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- E
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Power Dissipation-Max
- 78W Tc
- Case Connection
- DRAIN
- Turn On Delay Time
- 13 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 600m ? @ 3.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 680pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 10V
- Rise Time
- 13ns
- Drain to Source Voltage (Vdss)
- 600V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
- Fall Time (Typ)
- 14 ns
- Turn-Off Delay Time
- 24 ns
- Continuous Drain Current (ID)
- 7A
- JEDEC-95 Code
- TO-252AA
- Gate to Source Voltage (Vgs)
- 30V
- Drain Current-Max (Abs) (ID)
- 7A
- Drain-source On Resistance-Max
- 0.6Ohm
- Pulsed Drain Current-Max (IDM)
- 18A
- DS Breakdown Voltage-Min
- 609V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for VISHAY SIHD7N60ET4-GE3.
RohsStatement:
SIHD7N60ET4-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 680pF @ 100V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 7A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 24 ns.A maximum pulsed drain current of 18A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 609V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
SIHD7N60ET4-GE3 Features
a continuous drain current (ID) of 7A
the turn-off delay time is 24 ns
based on its rated peak drain current 18A.
a 600V drain to source voltage (Vdss)
SIHD7N60ET4-GE3 Applications
There are a lot of Vishay Siliconix
SIHD7N60ET4-GE3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
User Guide
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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