VISHAY SQJA04EP-T1_GE3
Manufacturer No:
SQJA04EP-T1_GE3
Manufacturer:
Package:
PowerPAK® SO-8
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.2mOhm @ 10A, 10V ±20V 3500pF @ 25V 55nC @ 10V 60V PowerPAK® SO-8
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SQJA04EP-T1_GE3 information
VISHAY SQJA04EP-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SQJA04EP-T1_GE3.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Supplier Device Package
- PowerPAK® SO-8
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchFET®
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 68W Tc
- Power Dissipation
- 68W
- Turn On Delay Time
- 15 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 6.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 3500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 75A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 55nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Turn-Off Delay Time
- 25 ns
- Continuous Drain Current (ID)
- 75A
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Breakdown Voltage
- 60V
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Resistance
- 5.1mOhm
- Height
- 1.267mm
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for VISHAY SQJA04EP-T1_GE3.
RohsStatement:
SQJA04EP-T1_GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 5.1mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
SQJA04EP-T1_GE3 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 5.1mOhm
a 60V drain to source voltage (Vdss)
SQJA04EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA04EP-T1_GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
User Guide
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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