
If you are manufacturing memory modules (DIMMs) or repairing high-performance industrial PCs, you have likely encountered the Micron MT40A1G8SA-062E:R.
This chip is one of the most widely used "building blocks" in the DDR4 ecosystem. It is an 8 Gigabit (Gb) DRAM component running at 3200 MT/s. Its ubiquity makes it a standard, but its part number can be confusing. What does "062E" actually mean? Why is Revision "R" important?
This guide breaks down the datasheet and technical details of this essential Micron component.
Table of Contents
- 1. Decoding the Part Number: What "062E:R" Means
- 2. Technical Specifications & Architecture
- 3. Applications & Compatibility
- 4. Cross-Reference & Alternatives
- 5. Conclusion
1. Decoding the Part Number: What "062E:R" Means
Micron part numbers are packed with information. Let's decode MT40A1G8SA-062E:R.
The Breakdown Table
| Code Segment | Meaning | Detail |
|---|---|---|
| MT | Micron Technology | Manufacturer. |
| 40A | DDR4 SDRAM | 1.2V Core Voltage. |
| 1G8 | Density & Org | 8Gb capacity, organized as 1 Gig x 8. |
| SA | Package | 78-ball FBGA (8mm x 12mm). |
| -062E | Speed Grade | $t_{CK} = 0.625ns$ $\rightarrow$ 3200 MT/s. |
| :R | Die Revision | Revision R (1z nm process). |
The Speed Grade "062E" (DDR4-3200)
This is often the most confusing part. The code -062E refers to the clock cycle time ($t_{CK}$) in nanoseconds.
- The Math: $1 / 0.625ns = 1600 MHz$ Clock Frequency.
- Double Data Rate: $1600 MHz \times 2 = 3200 MT/s$.
- CAS Latency: The "E" typically denotes a CL = 22 timing profile (DDR4-3200AA).
- Takeaway: This chip is designed to run natively at 3200 MT/s without XMP overclocking.
Die Revision "R" (1z nm)
The :R suffix indicates the Die Revision.
- Evolution: Micron iterates its manufacturing process to shrink the die and improve yield. Common revisions include Rev. B, Rev. E, and now Rev. R.
- Rev R (1z nm): This is a mature, highly efficient process node. It generally runs cooler and provides better yields than older revisions.
- Compatibility Warning: When building a DIMM, do not mix die revisions on the same PCB. If you start your production run with Rev. R, finish with Rev. R to ensure signal integrity.
2. Technical Specifications & Architecture
The MT40A1G8SA-062E:R is a discrete DRAM component, not a finished module.
- Density: 8Gb (1 Gigabits x 8).
- Voltage: 1.2V (VDD).
- Operating Temp: 0°C to 95°C (Commercial).
- Banks: 16 Banks (4 Bank Groups x 4 Banks).
- Package: 78-ball FBGA (Flip Chip Ball Grid Array).
x8 vs x16 Organization
This chip is configured as 1G x 8.
- x8 chips are the standard for desktop (UDIMM), laptop (SODIMM), and server (RDIMM) memory modules. You typically need 8 chips to make a Non-ECC rank, or 9 chips to make an ECC rank.
- x16 chips are typically used for soldered-down memory on thin laptops to save space, but they have lower performance (bank contention).
- Use Case: This chip is perfect for building standard 8GB (1 Rank) or 16GB (2 Rank) memory sticks.
3. Applications & Compatibility
Sourcing for Module Manufacturing
Because this is a "Component" level part, the primary buyers are:
- Module Houses: Companies assembling generic DDR4-3200 DIMMs.
- Repair Technicians: Replacing a single failed chip on a soldered laptop motherboard (common in MacBook or Ultrabook repairs).
- Industrial OEMs: Designing custom embedded boards with soldered RAM.
Price Analysis & Stock Availability
DDR4 prices are stabilizing as the market shifts to DDR5. However, 8Gb x8 3200 chips remain high volume.
Procurement Tip: Ensure you verify the Date Code and Die Revision. [Check Stock for MT40A1G8SA-062E:R at Aichiplink] to view inventory from verified distributors.
4. Cross-Reference & Alternatives
If you cannot find the exact Micron part, the following are functionally equivalent (8Gb, x8, 3200 MT/s, FBGA-78):
- Samsung: K4A8G085W?-BCWE (The "?" denotes Die Rev, typically B, C, or D).
- SK Hynix: H5AN8G8N??R-XNC (The "XNC" denotes 3200 speeds).
Note: While electrical specs match, mixing brands on the same memory channel is not recommended.
5. Conclusion
The Micron MT40A1G8SA-062E:R is the workhorse of the DDR4-3200 era. Its 8Gb density and x8 organization make it the fundamental building block for the vast majority of 3200MHz memory modules in the market today. Understanding its Revision and Speed Grade ensures you source the exact part needed for your manufacturing or repair line.
Sourcing Memory Components Secure your supply chain for high-quality DRAM. Visit Aichiplink.com to search for MT40A1G8SA-062E:R and compatible Samsung/Hynix alternatives.

Written by Jack Elliott from AIChipLink.
AIChipLink, one of the fastest-growing global independent electronic components distributors in the world, offers millions of products from thousands of manufacturers, and many of our in-stock parts is available to ship same day.
We mainly source and distribute integrated circuit (IC) products of brands such as Broadcom, Microchip, Texas Instruments, Infineon, NXP, Analog Devices, Qualcomm, Intel, etc., which are widely used in communication & network, telecom, industrial control, new energy and automotive electronics.
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Frequently Asked Questions
What is the MT40A1G8SA-062E:R used for?
The MT40A1G8SA-062E:R is an 8Gb DDR4-3200 x8 DRAM component used to build DDR4 UDIMM, SODIMM, RDIMM memory modules, as well as soldered-down memory on industrial and embedded systems.
What does the “062E” speed grade mean on Micron DDR4 chips?
The 062E speed grade indicates a clock cycle time of 0.625 ns, corresponding to DDR4-3200 (3200 MT/s) operation. It typically aligns with JEDEC DDR4-3200AA timing, commonly CL22 at 1.2V.
What is the difference between Micron die revisions like :B, :E, and :R?
The suffix :R indicates Revision R, manufactured on Micron’s 1z-nm process. Compared to older revisions, Rev. R generally offers better power efficiency, thermal behavior, and yield. Mixing die revisions on the same memory module is not recommended.
Can the MT40A1G8SA-062E:R be mixed with Samsung or SK Hynix chips?
Electrically it may work, but mixing brands or die revisions on the same DIMM or memory channel is not recommended. For module manufacturing or repairs, using identical chips ensures better signal integrity, timing stability, and long-term reliability.
How much memory can be built using MT40A1G8SA-062E:R chips?
Each chip is 8Gb (1GB). 8 chips → 8GB non-ECC (1 rank) 16 chips → 16GB dual-rank 9 or 18 chips → ECC modules This makes it ideal for 8GB, 16GB, and 32GB DDR4-3200 memory modules depending on PCB design.